Liquid helium temperature operation of graded-channel SOI nMOSFETs

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dc.contributor.advisorDE SOUZA, M.; KILCHYTSHA, V.; FLANDRE, D.; PAVANELLO, M. A. Liquid helium temperature operation of graded-channel SOI nMOSFETs. ECS Transactions. Sept. 2012.
dc.contributor.authorMichelly De Souza
dc.contributor.authorKILCHYTSHA, V.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-01-12T22:02:59Z
dc.date.available2022-01-12T22:02:59Z
dc.date.issued2012-09-02
dc.description.abstractThis work reports, for the first time, the operation of Graded-Channel SOI nMOSFETs at liquid helium temperature. As expected, for all measured devices it has been observed that at 4.2K the transconductance increases with respect to room temperature as a consequence of the mobility rise. On the opposite hand, all the studied devices demonstrated a degradation of the output conductance with temperature reduction. However, this degradation is attenuated below 90K. As a consequence, an increase of the Early voltage and of the intrinsic voltage gain were obtained, in contrast to the data reported in the literature, for devices operating down to 100K. It is demonstrated that GC SOI presented larger Early voltage increase at 4.2K than at room temperature. The rise of the voltage gain promoted by GC architecture has shown to be constant with temperature down to 4.2K. © The Electrochemical Society.
dc.description.firstpage135
dc.description.issuenumber1
dc.description.lastpage144
dc.description.volume49
dc.identifier.doi10.1149/04901.0135ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4172
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleLiquid helium temperature operation of graded-channel SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-79951734192
fei.scopus.subjectEarly voltage
fei.scopus.subjectGraded channels
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectLiquid helium temperature
fei.scopus.subjectOutput conductance
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectTemperature reduction
fei.scopus.subjectVoltage gain
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79951734192&origin=inward
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