Simple analytical model to study the ZTC bias point in FinFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2007-05-11
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
BELLODI, M.
CAMILLO, L. M.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
In this work we present a simple analytical model to study the Zero Temperature Coefficient (ZTC) bias point in FinFETs operating from room temperature up to 573 K. Three-dimensional simulations are carried out and compared with experimental results to qualify the results. © The Electrochemical Society.
Citação
BELLODI, M.; CAMILLO, L. M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Simple analytical model to study the ZTC bias point in FinFETs. ECS Transactions, v. 6, n. 4, p. 205-209, Mayo, 2007.
Palavras-chave
Keywords
Assuntos Scopus
Analytical modelling; bias points; Electrochemical Society (ECS); Experimental results; FinFETs; International symposium; Room-temperature (RT); Silicon on insulator (SOI) technology; Three dimensional (3D) simulations; Zero temperatures