3D simulation of triple-gate MOSFETs with different mobility regions
Nenhuma Miniatura disponível
Citações na Scopus
9
Tipo de produção
Artigo
Data
2011-07-05
Autores
CONDE, J.
CERDEIRA, A.
Marcelo Antonio Pavanello
KILCHYTSKA, V.
FLANDRE, D.
CERDEIRA, A.
Marcelo Antonio Pavanello
KILCHYTSKA, V.
FLANDRE, D.
Orientador
Periódico
Microelectronic Engineering
Título da Revista
ISSN da Revista
Título de Volume
Citação
CONDE, J.; CERDEIRA, A.; PAVANELLO, M. A.; KILCHYTSKA, V.; FLANDRE, D. 3D simulation of triple-gate MOSFETs with different mobility regions. Microelectronic Engineering, v. 88, n. 7, p. 1633-1636, Jul. 2011.
Texto completo (DOI)
Palavras-chave
Resumo
In this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier mobilities in each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Robustness of the proposed structure is validated by experimental data obtained on FinFETs. A very good agreement is obtained between experimental and simulated characteristics. © 2011 Elsevier B.V. All rights reserved.