3D simulation of triple-gate MOSFETs with different mobility regions
N/D
Tipo de produção
Artigo
Data de publicação
2011-07-05
Texto completo (DOI)
Periódico
Microelectronic Engineering
Editor
Texto completo na Scopus
Citações na Scopus
9
Autores
CONDE, J.
CERDEIRA, A.
Marcelo Antonio Pavanello
KILCHYTSKA, V.
FLANDRE, D.
Orientadores
Resumo
In this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier mobilities in each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Robustness of the proposed structure is validated by experimental data obtained on FinFETs. A very good agreement is obtained between experimental and simulated characteristics. © 2011 Elsevier B.V. All rights reserved.
Citação
CONDE, J.; CERDEIRA, A.; PAVANELLO, M. A.; KILCHYTSKA, V.; FLANDRE, D. 3D simulation of triple-gate MOSFETs with different mobility regions. Microelectronic Engineering, v. 88, n. 7, p. 1633-1636, Jul. 2011.
Palavras-chave
Keywords
3D simulation; Double-gate modeling; FinFET modeling; FinFET simulation
Assuntos Scopus
3D simulations; 3D Structure; Crystalline orientations; Double-gate; Experimental data; FinFET modeling; FinFET simulation; FinFETs; Mobility parameters; Mobility region; Triple-gate MOSFETs