3D simulation of triple-gate MOSFETs with different mobility regions

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dc.contributor.authorCONDE, J.
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorKILCHYTSKA, V.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2019-08-19T23:45:10Z
dc.date.available2019-08-19T23:45:10Z
dc.date.issued2011-07-05
dc.description.abstractIn this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier mobilities in each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Robustness of the proposed structure is validated by experimental data obtained on FinFETs. A very good agreement is obtained between experimental and simulated characteristics. © 2011 Elsevier B.V. All rights reserved.
dc.description.firstpage1633
dc.description.issuenumber7
dc.description.lastpage1636
dc.description.volume88
dc.identifier.citationCONDE, J.; CERDEIRA, A.; PAVANELLO, M. A.; KILCHYTSKA, V.; FLANDRE, D. 3D simulation of triple-gate MOSFETs with different mobility regions. Microelectronic Engineering, v. 88, n. 7, p. 1633-1636, Jul. 2011.
dc.identifier.doi10.1016/j.mee.2011.03.013
dc.identifier.issn0167-9317
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1085
dc.relation.ispartofMicroelectronic Engineering
dc.rightsAcesso Restrito
dc.subject.otherlanguage3D simulation
dc.subject.otherlanguageDouble-gate modeling
dc.subject.otherlanguageFinFET modeling
dc.subject.otherlanguageFinFET simulation
dc.title3D simulation of triple-gate MOSFETs with different mobility regions
dc.typeArtigo
fei.scopus.citations9
fei.scopus.eid2-s2.0-79958039193
fei.scopus.subject3D simulations
fei.scopus.subject3D Structure
fei.scopus.subjectCrystalline orientations
fei.scopus.subjectDouble-gate
fei.scopus.subjectExperimental data
fei.scopus.subjectFinFET modeling
fei.scopus.subjectFinFET simulation
fei.scopus.subjectFinFETs
fei.scopus.subjectMobility parameters
fei.scopus.subjectMobility region
fei.scopus.subjectTriple-gate MOSFETs
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79958039193&origin=inward
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