Low temperature operation of undoped body triple-gate FinFETs from an analog perspective
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Data
2007-09-06
Autores
Marcelo Antonio Pavanello
MARTINO, J. A.
SIMOEN, E.
ROOYACKERS R.
COLLAERT, N.
CLAEYS, C
MARTINO, J. A.
SIMOEN, E.
ROOYACKERS R.
COLLAERT, N.
CLAEYS, C
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Periódico
ECS Transactions
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PAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; ROOYACKERS R.; COLLAERT, N.; CLAEYS, C. Low temperature operation of undoped body triple-gate FinFETs from an analog perspective. ECS Transactions, v. 9, n. 1, p. 19-27, 2007.
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This paper studies the temperature reduction influence on some analog figures of merit of n-type triple-gate FinFETs with undoped body, using DC measurements. It is demonstrated that the temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L=90 nm FinFET is degraded by 3 dB when the temperature reduces from 300 K down to 100 K. A comparison with planar single gate fully depleted SOI reveals that the temperature degradation of the output conductance in FinFETs is less temperature-dependent. © The Electrochemical Society.