Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths

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Tipo de produção

Artigo de evento

Data de publicação

2018-10-18

Texto completo (DOI)

Periódico

2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

Editor

Citações na Scopus

3

Autores

Rodrigo Doria
TREVISOLI, R.
Michelly De Souza
Marcelo Antonio Pavanello
VINET, M.
CASSE, M.
FAYNOT, O.

Orientadores

Resumo

This paper aims at presenting, for the first time, an experimental comparative analysis between the main electrical parameters of Junctionless (JNT) and inversion mode nanowire (IM) transistors fabricated in SOI technology down to channel length of 10 nm. The analysis has shown that JNTs present larger immunity to SCEs with respect to IM nanowires of similar dimensions. However, JNTs have shown poorer Ion than IM devices, which could be compensated through the application of multifin JNTs, at cost of increasing area consumption.

Citação

DORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A.; VINET, M.; CASSE, M.; FAYNOT, O. Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, p.1-3, Oct. 2018.

Palavras-chave

Keywords

DiBL; Junctioless transistors; SOI Technology; Subthreshold swing; Transconductance; Undoped Nanowires

Assuntos Scopus

Channel length; Comparative analysis; DiBL; Electrical parameter; Inversion modes; Nanowire transistors; SOI technology; Subthreshold swing

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