Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths
N/D
Tipo de produção
Artigo de evento
Data de publicação
2018-10-18
Texto completo (DOI)
Periódico
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
Rodrigo Doria
TREVISOLI, R.
Michelly De Souza
Marcelo Antonio Pavanello
VINET, M.
CASSE, M.
FAYNOT, O.
Orientadores
Resumo
This paper aims at presenting, for the first time, an experimental comparative analysis between the main electrical parameters of Junctionless (JNT) and inversion mode nanowire (IM) transistors fabricated in SOI technology down to channel length of 10 nm. The analysis has shown that JNTs present larger immunity to SCEs with respect to IM nanowires of similar dimensions. However, JNTs have shown poorer Ion than IM devices, which could be compensated through the application of multifin JNTs, at cost of increasing area consumption.
Citação
DORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A.; VINET, M.; CASSE, M.; FAYNOT, O. Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, p.1-3, Oct. 2018.
Palavras-chave
Keywords
DiBL; Junctioless transistors; SOI Technology; Subthreshold swing; Transconductance; Undoped Nanowires
Assuntos Scopus
Channel length; Comparative analysis; DiBL; Electrical parameter; Inversion modes; Nanowire transistors; SOI technology; Subthreshold swing