Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors
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2023-10-05
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SILVA, L. M. B. DA
Marcelo Antonio Pavanello
CASSÉ, M.
BARRAUD, S.
VINET, M.
FAYNOT, O.
Michelly De Souza
Marcelo Antonio Pavanello
CASSÉ, M.
BARRAUD, S.
VINET, M.
FAYNOT, O.
Michelly De Souza
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Solid-State Electronics
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SILVA, L. M. B. DA; PAVANELLO, M. A.; CASSÉ, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; DE SOUZA, M. Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors. Solid-State Electronics, v. 208, oct. 2023.
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© 2023 Elsevier LtdThis work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors.