Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Lateral spacers influence on the effective channel length of junctionless nanowire transistors

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Tipo de produção

Artigo de evento

Data de publicação

2017-10-16

Texto completo (DOI)

Periódico

2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017

Editor

Citações na Scopus

7

Autores

TREVISOLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello

Orientadores

Resumo

This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.

Citação

TREVISOLI, R.; DORIA, R.; DE SOUZA, M; PAVANELLO, M. A. Lateral spacers influence on the effective channel length of junctionless nanowire transistors. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. v. 2018-March, p. 1-3, 2017.

Palavras-chave

Keywords

Effective Length; Junctionless Nanowires Transistors; Lateral Spacers

Assuntos Scopus

Effective channel length; Effective Length; Electrical behaviors; Lateral Spacers; Nanowire transistors; Nanowires transistors

Coleções

Avaliação

Revisão

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