Lateral spacers influence on the effective channel length of junctionless nanowire transistors
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6
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2017-10-16
Autores
TREVISOLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
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Periódico
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
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TREVISOLI, R.; DORIA, R.; DE SOUZA, M; PAVANELLO, M. A. Lateral spacers influence on the effective channel length of junctionless nanowire transistors. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. v. 2018-March, p. 1-3, 2017.
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This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.