Lateral spacers influence on the effective channel length of junctionless nanowire transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2017-10-16
Texto completo (DOI)
Periódico
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
Editor
Texto completo na Scopus
Citações na Scopus
7
Autores
TREVISOLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
Orientadores
Resumo
This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.
Citação
TREVISOLI, R.; DORIA, R.; DE SOUZA, M; PAVANELLO, M. A. Lateral spacers influence on the effective channel length of junctionless nanowire transistors. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. v. 2018-March, p. 1-3, 2017.
Palavras-chave
Keywords
Effective Length; Junctionless Nanowires Transistors; Lateral Spacers
Assuntos Scopus
Effective channel length; Effective Length; Electrical behaviors; Lateral Spacers; Nanowire transistors; Nanowires transistors