Effective channel length in Junctionless Nanowire Transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-10-13
Texto completo (DOI)
Periódico
SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
17
Autores
TREVISOLLI, R.
Rodrido Doria
Michelly De Souza
Marcelo Antonio Pavanello
Orientadores
Resumo
The aim of this work is to analyze the influence of the lateral depletion induced by the gate towards the source/drain regions on the effective channel length of Junctionless Nanowire Transistors. The effective channel length increase at the subthreshold regime is analyzed by means of simulations together with experimental results, showing that the JNT can be significantly longer than the gate length.
Citação
TREVISOLLI, R.; DORIA R., DE SOUZA, M.; PAVANELLO, M. A. Effective channel length in Junctionless Nanowire Transistors. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Oct. 2015.
Palavras-chave
Keywords
Effective Channel Length; Junctionless Transistors; Subthreshold Operation
Assuntos Scopus
Effective channel length; Gate length; Junctionless transistors; Nanowire transistors; Source/drain regions; Subthreshold; Subthreshold operation