A new analytic model for double gate FinFETs parasitic resistance
N/D
Tipo de produção
Artigo de evento
Data de publicação
2012-09-02
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
PEREIRA, A. S. N.
Renato Giacomini
Orientadores
Resumo
A new analytic model for Parasitic Resistance of Double Gate FinFETs is proposed in this work. The model was developed considering the current distribution observed in three-dimensional simulations. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters and is very accurate when compared to simulation results and published experimental data. © The Electrochemical Society.
Citação
PEREIRA, A. S. N.; GIACOMINI, R. A new analytic model for double gate FinFETs parasitic resistance. ECS Transactions, v. 49, n. 1, p. 127-134, Sept. 2012.
Palavras-chave
Keywords
Assuntos Scopus
Adjustment parameter; Analytic modeling; Current distribution; Parasitic resistances; Source and drains; Three dimensional simulations; Transmission line modeling; Variable impedance