Repositório do Conhecimento Institucional do Centro Universitário FEI
 

A new analytic model for double gate FinFETs parasitic resistance

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Tipo de produção

Artigo de evento

Data de publicação

2012-09-02

Texto completo (DOI)

Periódico

ECS Transactions

Editor

Citações na Scopus

2

Autores

PEREIRA, A. S. N.
Renato Giacomini

Orientadores

Resumo

A new analytic model for Parasitic Resistance of Double Gate FinFETs is proposed in this work. The model was developed considering the current distribution observed in three-dimensional simulations. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters and is very accurate when compared to simulation results and published experimental data. © The Electrochemical Society.

Citação

PEREIRA, A. S. N.; GIACOMINI, R. A new analytic model for double gate FinFETs parasitic resistance. ECS Transactions, v. 49, n. 1, p. 127-134, Sept. 2012.

Palavras-chave

Keywords

Assuntos Scopus

Adjustment parameter; Analytic modeling; Current distribution; Parasitic resistances; Source and drains; Three dimensional simulations; Transmission line modeling; Variable impedance

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