Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style

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dc.contributor.authorVONO PERUZZI, V.
dc.contributor.authorRENAUX, C.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T21:57:49Z
dc.date.available2022-01-12T21:57:49Z
dc.date.issued2017-09-01
dc.description.abstractOn this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with α angles equal to 53.1° and 90° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.
dc.identifier.citationVONO PERUZZI, V.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style. SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum, Sept. 2017.
dc.identifier.doi10.1109/SBMicro.2017.8112993
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3819
dc.relation.ispartofSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageanalog SOI CMOS ICs
dc.subject.otherlanguageDevices Matching
dc.subject.otherlanguagenew layouts of SOI MOSFETs
dc.subject.otherlanguageSOI nMOSFETs
dc.titleComparative experimental study of the improved MOSFETs matching by using the hexagonal layout style
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85040633644
fei.scopus.subjectBias conditions
fei.scopus.subjectComparative analysis
fei.scopus.subjectDevices Matching
fei.scopus.subjectElectrical parameter
fei.scopus.subjectMetal oxide semiconductor
fei.scopus.subjectSOI CMOS
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectSOI-MOSFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040633644&origin=inward
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