NW-TFET analog performance for different Ge source compositions

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorDOS SANTOS, S. D.
dc.contributor.authorNEVES, F. S.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorVANDOOREN, A.
dc.contributor.authorROOYACKERS, R.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:01:41Z
dc.date.available2022-01-12T22:01:41Z
dc.date.issued2013-10-10
dc.description.abstractThe analog performance of hetero-junction vertical NanoWire Tunnel FETs (NW-TFETs) with different Ge source compositions (27% and 46%) is studied and compared to Si source devices. Although the NW-TFETs with the highest amount of Ge at the source present the highest transconductance (lower bandgap and higher BTBT predominance), the NW-TFETs with 27% Ge source present a better intrinsic voltage gain (AV) due to their better output conductance (less drain electric field penetration than for 46%). The Si source NW-TFET presented the worst analog behavior at lower gate bias. However, when VGS increases, smaller is its AV degradation making it equal or better than the value obtained for SiGe source devices, since in the former the Trap Assisted Tunneling (TAT) is predominant. The peculiar NW-TFET low frequency noise behavior is also presented. © 2013 IEEE.
dc.identifier.citationAGOPIAN, P. G. D.; DOS SANTOS, S. D.; NEVES, F. S.; MARTINO, J. A.;VANDOOREN, A.; ROOYACKERS, R.; SIMOEN, E.; CLAEYS, C. NW-TFET analog performance for different Ge source compositions. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Oct. 2013.
dc.identifier.doi10.1109/S3S.2013.6716561
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4084
dc.relation.ispartof2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
dc.rightsAcesso Restrito
dc.titleNW-TFET analog performance for different Ge source compositions
dc.typeArtigo de evento
fei.scopus.citations11
fei.scopus.eid2-s2.0-84897731456
fei.scopus.subjectAnalog performance
fei.scopus.subjectElectric field penetrations
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectOutput conductance
fei.scopus.subjectSource composition
fei.scopus.subjectTrap assisted tunneling
fei.scopus.subjectVertical nanowires
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84897731456&origin=inward
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