Fin cross-section shape influence on short channel effects of mugfets

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dc.contributor.authorBUHLER, R. T.
dc.contributor.authorGiacomini R.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:49:13Z
dc.date.available2023-08-26T23:49:13Z
dc.date.issued2012-05-05
dc.description.abstractMultiple-gate FETs is normally constructed on pre-etched silicon fins. These devices often present casual width variations along the silicon height; mostly caused by technological limitations of the fin definition process, due to non-ideal anisotropic etch. The resulting devices have, consequently, non-rectangular cross-sections, which can affect their electrical behavior. This work addresses the dependence of fin width non-uniformity on the occurrence of short-channel effects through comparative analysis, based on threedimensional numeric simulation of non-rectangular cross-section devices. The influence of the fin crosssection shape on electrical parameters showed to be dependent on channel length, becoming more sensible to the fin shape as the channel length is reduced, with better DC performance present on devices with bottom fin width smaller than top fin width due to the higher transconductance and lower output conductance, resulting on higher intrinsic voltage gain. For opposite fin shapes the total gate capacitance present higher values, beneficiating AC analog parameters, such as unit gain frequency.
dc.description.firstpage137
dc.description.issuenumber2
dc.description.lastpage144
dc.description.volume7
dc.identifier.citationBUHLER, R. T.; GIACOMINI, R.; PAVANELLO, M. A. P.; MARTINO, J. A. Fin cross-section shape influence on short channel effects of mugfets. Journal of Integrated Circuits and Systems, v. 7, n. 2, p. 137-144, 2012.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4960
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageElectrical parameters
dc.subject.otherlanguageFin geometry
dc.subject.otherlanguageMuGFET
dc.subject.otherlanguageNanotechnology
dc.subject.otherlanguageShort channel effects
dc.subject.otherlanguageSOI
dc.titleFin cross-section shape influence on short channel effects of mugfets
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-84869989981
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84869989981&origin=inward
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