Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

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dc.contributor.authorSEIXAS, L E
dc.contributor.authorFINCO, S
dc.contributor.authorSILVEIRA, M A G
dc.contributor.authorMEDINA, N H
dc.contributor.authorGIMENEZ, S P
dc.date.accessioned2019-08-19T23:47:19Z
dc.date.available2019-08-19T23:47:19Z
dc.date.issued2017
dc.description.firstpage015901
dc.description.issuenumber1
dc.description.volume4
dc.identifier.citationSEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017.
dc.identifier.doi10.1088/2053-1591/4/1/015901
dc.identifier.issn2053-1591
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1467
dc.relation.ispartofMaterials Research Express
dc.rightsAcesso Aberto
dc.titleStudy of proton radiation effects among diamond and rectangular gate MOSFET layoutspt_BR
dc.typeArtigopt_BR
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