Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

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dc.contributor.authorPavanello M.A.
dc.contributor.authorDe Souza M.
dc.contributor.authorRibeiro T.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:12Z
dc.date.available2019-08-19T23:45:12Z
dc.date.issued2016
dc.description.abstract© 2016 IOP Publishing Ltd.This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped transistors. Devices from two different technologies have been measured and show that the mobility increase rate with temperature for GC SOI transistors is similar to uniformly doped devices for temperatures down to 90 K. However, at liquid helium temperature the rate of mobility increase is larger in GC SOI than in standard devices because of the different mobility scattering mechanisms. The analog properties of GC SOI devices have been investigated down to 4.16 K and show that because of its better transconductance and output conductance, an intrinsic voltage gain improvement with temperature is also obtained for devices in the whole studied temperature range. GC devices are also capable of reducing the impact ionization due to the high electric field in the drain region, increasing the drain breakdown voltage of fully-depleted SOI MOSFETs at any studied temperature and the kink voltage at 4.16 K.
dc.description.firstpage114005
dc.description.issuenumber11
dc.description.volume31
dc.identifier.citationPavanello, Marcelo Antonio; SOUZA, Michelly de; RIBEIRO, Thales Augusto; MARTINO, João Antonio; FLANDRE, D.. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology (Print), v. 31, p. 114005, 2016.
dc.identifier.doi10.1088/0268-1242/31/11/114005
dc.identifier.issn1361-6641
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1118
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Restrito
dc.subject.otherlanguageanalog characteristics
dc.subject.otherlanguagechannel engineering
dc.subject.otherlanguageelectrical characterization
dc.subject.otherlanguagegraded-channel
dc.subject.otherlanguagelow temperature
dc.subject.otherlanguagesilicon-on-insulator
dc.titleImproved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-84993945314
fei.scopus.subjectanalog characteristics
fei.scopus.subjectChannel engineering
fei.scopus.subjectElectrical characterization
fei.scopus.subjectGraded channels
fei.scopus.subjectLow temperatures
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84993945314&origin=inward
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