Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
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2
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2014
Autores
Bordallo C.C.M.
Teixeira F.F.
Silveira M.A.G.
Martino J.A.
Agopian P.G.D.
Simoen E.
Claeys C.
Teixeira F.F.
Silveira M.A.G.
Martino J.A.
Agopian P.G.D.
Simoen E.
Claeys C.
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Periódico
Semiconductor Science and Technology
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BORDALLO, C. C. M.; SILVEIRA, M. A. G.; TEIXEIRA, F. F.; MARTINO, J. A.; AGOPIAN, P. G. D.; CLAEYS, C.; SIMOEN, E.. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, v. 29, n. 12, p. 125015, 2014.
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© 2014 IOP Publishing Ltd.The influence of x-ray irradiation on the main digital and analog parameters of triple gate silicon-on- insulator FinFETs is investigated for unstrained and uniaxially strained devices. Comparing the p- and n-MuGFET response to radiation, x-rays can be more harmful for nMuGFETs than for the p-type counterparts due to the back-interface leakage current, which is generated by the positive charges trapped in the buried oxide. However, in pMuGFETs, the radiation tends to suppress the parasitic back-conduction, resulting in an improvement of the device performance.