Low-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors

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dc.contributor.authorDoria R.T.
dc.contributor.authorTrevisoli R.
dc.contributor.authorDe Souza M.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:11Z
dc.date.available2019-08-19T23:45:11Z
dc.date.issued2014
dc.description.abstractThis work presents an evaluation of the Low-Frequency Noise (LFN) exhibited by short-channel Junctionless Nanowire Transistors (JNTs). Unlike in previous works in which only the noise of n-type transistors was evaluated, this paper exhibits an analysis of both the LFN and the effective trap density of n- and p-type JNTs. The low-frequency noise is analyzed in terms of the channel length as well as doping concentration and has shown to be nearly independent on the former parameter when the device is biased above threshold and to decrease with the raise of the latter. Also, carrier number fluctuations dominate the LFN in nMOS JNTs whereas an important mobility fluctuation component is present in the pMOS ones. The effective trap density of JNTs has shown to be in the order of 1019 cm-3 eV-1, presenting its maximum around 1.4 nm away from the silicon/gate dielectric interface independently on the device type or doping concentration. © 2014 Elsevier Ltd. All rights reserved.
dc.description.firstpage22
dc.description.lastpage26
dc.description.volume96
dc.identifier.citationDORIA, Rodrigo Trevisoli; TREVISOLI, R D; DE SOUZA, Michelly; PAVANELLO, M. A.. Low-Frequency Noise and Effective Trap Density of Short Channel P- and N-Types Junctionless Nanowire Transistors. Solid-State Electronics, v. 96, p. 22-26, 2014.
dc.identifier.doi10.1016/j.sse.2014.04.019
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1103
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageEffective trap density
dc.subject.otherlanguageJunctionless nanowire transistors
dc.subject.otherlanguageLow-frequency noise
dc.titleLow-frequency noise and effective trap density of short channel p- and n-types junctionless nanowire transistors
dc.typeArtigo
fei.scopus.citations12
fei.scopus.eid2-s2.0-84899631325
fei.scopus.subjectCarrier number fluctuation
fei.scopus.subjectDielectric interface
fei.scopus.subjectDoping concentration
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectMobility fluctuations
fei.scopus.subjectNanowire transistors
fei.scopus.subjectShort channels
fei.scopus.subjectTrap density
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84899631325&origin=inward
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