Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorROOYACKERS, R.
dc.contributor.authorVANDOOREN, A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:01:28Z
dc.date.available2022-01-12T22:01:28Z
dc.date.issued2013-01-05
dc.description.abstractThis paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog comparison between these devices. A higher intrinsic voltage gain is obtained for p-TFET devices because of their better output conductance, which is more than four orders of magnitude better than the one obtained for p-FinFET transistors at the same bias conditions from room temperature up to 150° C. © 1963-2012 IEEE.
dc.description.firstpage2493
dc.description.issuenumber8
dc.description.lastpage2497
dc.description.volume60
dc.identifier.citationAGOPIAN, P. G. D.; MARTINO, J. A.; MARTINO, J. A.; VANDOOREN, A.; SIMOEN, E.; CLAEYS, C.Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature. IEEE Transactions on Electron Devices, v. 60, n. 8, 2013.
dc.identifier.doi10.1109/TED.2013.2267614
dc.identifier.issn0018-9383
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4070
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog performance
dc.subject.otherlanguageband-to-band tunneling (BTBT)
dc.subject.otherlanguagemultiple-gate tunneling field effect transistor (MuGTFET)
dc.subject.otherlanguageself-heating effect (SHE)
dc.subject.otherlanguagesilicon-on-insulator (SOI)
dc.subject.otherlanguagevertical multiple-gate SOI MOSFETs (FinFET)
dc.titleExperimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature
dc.typeArtigo
fei.scopus.citations68
fei.scopus.eid2-s2.0-84880906659
fei.scopus.subjectAnalog performance
fei.scopus.subjectBand to band tunneling
fei.scopus.subjectSelf-heating effect
fei.scopus.subjectSilicon-on-insulators
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectTunneling field-effect transistors
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84880906659&origin=inward
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