Experimental comparative study between the wave layout style and its conventional counterpart for implementation of analog integrated circuits
N/D
Tipo de produção
Artigo de evento
Data de publicação
2012-09-02
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
5
Autores
NAVARENHO, S. R.
Salvador Gimenez
Orientadores
Resumo
This paper performs an experimental comparative study between the Wave layout style ("S" shape gate geometry) and the Conventional (rectangular gate geometry) counterpart in order to verify and quantify the benefits that Wave structure can bring to improve the performance of devices in analog circuit, specially in trasconductance the ratio of transconductance between drain current as a function of the ratio of the drain current normalized by the geometric factor and frequency response (voltage gain and unit voltage gain frequency). By working with Wave structure instead of conventional counterpart, it can improve the device performance in terms of drain current in the triode and saturation regions, consequently better results in the transconductance and unit voltage gain frequency gains. © The Electrochemical Society.
Citação
NAVARENHO, S. R. ;GIMEMEZ, S. Experimental comparative study between the wave layout style and its conventional counterpart for implementation of analog integrated circuits. ECS Transactions, v. 49, n. 1, p. 519-526, Sept. 2012.
NAVARENHO, S. R. ; GIMENEZ, S. Experimental comparative study between the wave layout style and its conventional counterpart for implementation of analog integrated circuits. ECS Transactions, v. 49, n. 1, p. 519-526, Sept. 2012.
NAVARENHO, S. R. ; GIMENEZ, S. Experimental comparative study between the wave layout style and its conventional counterpart for implementation of analog integrated circuits. ECS Transactions, v. 49, n. 1, p. 519-526, Sept. 2012.
Palavras-chave
Keywords
Assuntos Scopus
Comparative studies; Device performance; Gate geometry; Geometric factors; Performance of devices; Saturation region; Voltage gain; Wave structures