Performance of ultra-low-power SOI CMOS diodes operating at low temperatures
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2011-01-05
Autores
Michelly De Souza
RUE, B.
FLANDRE, D.
Marcelo Antonio Pavanello
RUE, B.
FLANDRE, D.
Marcelo Antonio Pavanello
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Periódico
ECS Transactions
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DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Performance of ultra-low-power SOI CMOS diodes operating at low temperatures. ECS Transactions, v.35, n. 5, p. 325-330, Jan. 2011.
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In this work the low temperature performance of ultra-low-power SOI CMOS diodes is presented. Experimental measurements performed in fabricated devices from 148K to 373K show that the temperature lowering can promote a significant leakage current reduction and increase of the forward current. Two-dimensional numerical simulations are used to extend the studied temperature range and analyze the doping concentration influence on the low temperature operation of these diodes. ©The Electrochemical Society.