Using the hexagonal layout style for mosfets to boost the device matching in ionizing radiation environments

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.contributor.authorPERUZZI, V. V.
dc.contributor.authorCRUZ, W. S.
dc.contributor.authorSILVA, G. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorSalvador Gimenez
dc.date.accessioned2022-01-12T21:55:45Z
dc.date.available2022-01-12T21:55:45Z
dc.date.issued2020-01-05
dc.description.abstract© 2020, Brazilian Microelectronics Society. All rights reserved.This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technology and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha (α) angle equal to 90˚ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.
dc.description.firstpage1
dc.description.issuenumber2
dc.description.lastpage5
dc.description.volume15
dc.identifier.citationPERUZZI, V. V.; CRUZ, W. S.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for mosfets to boost the device matching in ionizing radiation environments. Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, Jan. 2020.
dc.identifier.doi10.29292/jics.v15i2.185
dc.identifier.issn1872-0234
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3679
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Aberto
dc.rights.licenseOpen Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85089906544&origin=inward. Acesso em: 27 maio 2022.
dc.subject.otherlanguageAnalog CMOS ICs
dc.subject.otherlanguageDiamond Layout Style
dc.subject.otherlanguageHardness-by-design technique
dc.subject.otherlanguageMOSFETs matching
dc.subject.otherlanguageTotal Ionizing Dose
dc.titleUsing the hexagonal layout style for mosfets to boost the device matching in ionizing radiation environments
dc.typeArtigo
fei.scopus.citations2
fei.scopus.eid2-s2.0-85089906544
fei.scopus.updated2023-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85089906544&origin=inward
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