Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors

dc.contributor.authorCOSTA, F. J.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorRodrigo Doria
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T21:56:21Z
dc.date.available2022-01-12T21:56:21Z
dc.date.issued2019-08-30
dc.description.abstract© 2019 IEEE.The goal of this work is to present the behavior of the substrate effect in Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs with the application of a selected set of back gate biases (VSUB) through DC and AC simulations. A set of different ground planes (GP) arrangements has been considered. It has been shown that the degradation due to the substrate effects increases as the substrate bias is reduced. According to the analysis, it could be observed the GP type influences the capacitive coupling of the structure as the back gate bias is varied. Additionally, it has been shown that the presence of the GP below the source and drain regions contributes significantly to the overall capacitive coupling of the device.
dc.identifier.citationCOSTA, F. J.; TREVISOLI, R.; DORIA, R. T. Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, August, 2019.
dc.identifier.doi10.1109/SBMicro.2019.8919305
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3719
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageBody Factor
dc.subject.otherlanguageSubstrate Effect
dc.subject.otherlanguageUTBB
dc.titleAnalysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-85077186818
fei.scopus.subjectBody factor
fei.scopus.subjectCapacitive couplings
fei.scopus.subjectDC and AC simulation
fei.scopus.subjectSource and drains
fei.scopus.subjectSubstrate bias
fei.scopus.subjectSubstrate effects
fei.scopus.subjectUltra-thin-body
fei.scopus.subjectUTBB
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85077186818&origin=inward
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