Temperature influences on FinFETs with undoped body
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4
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Data
2007-05-11
Autores
Marcelo Antonio Pavanello
MARTINO J. A.
SIMOEN, E.
ROOYACKERS, R.
COLLAERT, N.
CLAEYS, C.
MARTINO J. A.
SIMOEN, E.
ROOYACKERS, R.
COLLAERT, N.
CLAEYS, C.
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Periódico
ECS Transactions
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PAVANELO, M. A.; MARTINO J. A.; SIMOEN, E.; ROOYACKERS, R.; COLLAERT, N.; CLAEYS, C. Temperature influences on FinFETs with undoped body. ECS Transactions, v. 6, n. 4, p. 211-216, May, 2007.
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This work presents a study, based on DC measurements, of the temperature influence on the performance of nMOS triple-gate FinFETs with high-κdielectrics, TiN gate material and an undoped body. FinFETs show smaller threshold voltage variations with temperature than planar fully-depleted SOI MOSFETs. The subthreshold slope reduced with the temperature and approached the ideal value at lower temperatures In the temperature range under study the mobility increases linearly as the temperature is reduced and the dominating mobility degradation factor is phonon scattering. The DIBL has been evaluated and no temperature dependence has been found. Finally, the series resistance has been also extracted and demonstrates a reduction as the temperature is reduced due to the mobility improvement. © The Electrochemical Society.