Temperature influences on FinFETs with undoped body

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dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorROOYACKERS, R.
dc.contributor.authorCOLLAERT, N.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:05:12Z
dc.date.available2022-01-12T22:05:12Z
dc.date.issued2007-05-11
dc.description.abstractThis work presents a study, based on DC measurements, of the temperature influence on the performance of nMOS triple-gate FinFETs with high-κdielectrics, TiN gate material and an undoped body. FinFETs show smaller threshold voltage variations with temperature than planar fully-depleted SOI MOSFETs. The subthreshold slope reduced with the temperature and approached the ideal value at lower temperatures In the temperature range under study the mobility increases linearly as the temperature is reduced and the dominating mobility degradation factor is phonon scattering. The DIBL has been evaluated and no temperature dependence has been found. Finally, the series resistance has been also extracted and demonstrates a reduction as the temperature is reduced due to the mobility improvement. © The Electrochemical Society.
dc.description.firstpage211
dc.description.issuenumber4
dc.description.lastpage216
dc.description.volume6
dc.identifier.citationPAVANELO, M. A.; MARTINO J. A.; SIMOEN, E.; ROOYACKERS, R.; COLLAERT, N.; CLAEYS, C. Temperature influences on FinFETs with undoped body. ECS Transactions, v. 6, n. 4, p. 211-216, May, 2007.
dc.identifier.doi10.1149/1.2728863
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4323
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleTemperature influences on FinFETs with undoped body
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-45249124730
fei.scopus.subjectDC measurements
fei.scopus.subjectElectrochemical Society (ECS)
fei.scopus.subjectFinFETs
fei.scopus.subjectFully-depleted (FD)
fei.scopus.subjectGate materials
fei.scopus.subjectInternational symposium
fei.scopus.subjectmobility degradation
fei.scopus.subjectSeries resistance (ESR)
fei.scopus.subjectSilicon on insulator (SOI) technology
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectsubthreshold slopes
fei.scopus.subjectTemperature dependences
fei.scopus.subjectTemperature influence
fei.scopus.subjecttemperature ranges
fei.scopus.subjectThreshold voltage variations
fei.scopus.subjectTriple Gate
fei.scopus.subjectUndoped body
fei.scopus.updated2024-09-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45249124730&origin=inward
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