Radiation effect mechanisms in electronic devices

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dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorRoberto Santos
dc.contributor.authorLEITE, F.
dc.contributor.authorCUNHA, F.
dc.contributor.authorCIRNE, K. H.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorADDED, N.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.date.accessioned2023-08-26T23:48:58Z
dc.date.available2023-08-26T23:48:58Z
dc.date.issued2013-12-01
dc.description.abstract© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.
dc.identifier.citationGUAZZELLI, M. A.; SANTOS, R.; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P. Radiation effect mechanisms in electronic devices. Proceedings of Science, dec. 2013.
dc.identifier.issn1824-8039
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4944
dc.relation.ispartofProceedings of Science
dc.rightsAcesso Restrito
dc.titleRadiation effect mechanisms in electronic devices
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-85017422313
fei.scopus.subjectAfter-heat treatment
fei.scopus.subjectCommercial off the shelves
fei.scopus.subjectElectronic device
fei.scopus.subjectP-type characteristics
fei.scopus.subjectPelletron accelerators
fei.scopus.subjectTotal dose effect
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.subjectX ray diffractometers
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85017422313&origin=inward
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