Behavior of Graded Channel SOI Gate-All-Around nMOSFET devices at high temperatures
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2004-09-11
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SANTOS, C. D. G. DOS
Marcelo Antonio Pavanello
MARTINO, J. A.
FLANDRE, D.
RASKIN, J.-P.
Marcelo Antonio Pavanello
MARTINO, J. A.
FLANDRE, D.
RASKIN, J.-P.
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Proceedings - Electrochemical Society
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SANTOS, C. D. G. DOS; PAVANELLO, M. A.; MARTINO, J. A.; FLANDRE, D.;RASKIN, J.-P. Behavior of Graded Channel SOI Gate-All-Around nMOSFET devices at high temperatures. Proceedings - Electrochemical Society, v. 3, p. 9-14, sept. 2003.
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This paper presents the behavior of Graded Channel SOI Gate-All-Around (GAA) nMOSFET at high temperatures in the range of 27°C to 300°C. Threshold voltage, subthreshold slope, maximum transconductance, zero temperature coefficient and Early voltage were investigated through three-dimensional simulations and electrical characterization. It was verified that when temperature increases, threshold voltage decreases, subthreshold slope increases and did not suffer any degradation with the LLD/L ratio increase. The maximum transconductance decreases when temperature increases, and increases for larger LLD/L ratios, and Early voltage decreases almost linearly with temperature increase. The results show the excellent behavior of GC SOI GAA nMOSFET at high temperatures compared to conventional SOI GAA devices.