Behavior of Graded Channel SOI Gate-All-Around nMOSFET devices at high temperatures

Página do item simplificado
dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorSANTOS, C. D. G. DOS
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorRASKIN, J.-P.
dc.date.accessioned2023-08-26T23:50:50Z
dc.date.available2023-08-26T23:50:50Z
dc.date.issued2004-09-11
dc.description.abstractThis paper presents the behavior of Graded Channel SOI Gate-All-Around (GAA) nMOSFET at high temperatures in the range of 27°C to 300°C. Threshold voltage, subthreshold slope, maximum transconductance, zero temperature coefficient and Early voltage were investigated through three-dimensional simulations and electrical characterization. It was verified that when temperature increases, threshold voltage decreases, subthreshold slope increases and did not suffer any degradation with the LLD/L ratio increase. The maximum transconductance decreases when temperature increases, and increases for larger LLD/L ratios, and Early voltage decreases almost linearly with temperature increase. The results show the excellent behavior of GC SOI GAA nMOSFET at high temperatures compared to conventional SOI GAA devices.
dc.description.firstpage9
dc.description.lastpage14
dc.description.volume3
dc.identifier.citationSANTOS, C. D. G. DOS; PAVANELLO, M. A.; MARTINO, J. A.; FLANDRE, D.;RASKIN, J.-P. Behavior of Graded Channel SOI Gate-All-Around nMOSFET devices at high temperatures. Proceedings - Electrochemical Society, v. 3, p. 9-14, sept. 2003.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5060
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleBehavior of Graded Channel SOI Gate-All-Around nMOSFET devices at high temperatures
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-17044435490
fei.scopus.subjectAnalog application
fei.scopus.subjectGraded channel
fei.scopus.subjectLow doped region
fei.scopus.subjectOperational transconductance amplifier
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=17044435490&origin=inward
Arquivos
Coleções
Artigo de evento