Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias
N/D
Tipo de produção
Artigo de evento
Data de publicação
2014-10-29
Texto completo (DOI)
Periódico
2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
ASSALTI, R.
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
Orientadores
Resumo
This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.
Citação
ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct, 2014.
Palavras-chave
Keywords
Breakdown voltage; Gate voltage overdrive; Graded-Channel; Intrinsic voltage gain; Unit gain frequency
Assuntos Scopus
Analog performance; Gain frequencies; Gate voltages; Graded channels; Intrinsic voltage gains; nMOSFET transistors; Optimum length; Target application