Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias
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2014-10-29
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ASSALTI, R.
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
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2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
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ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct, 2014.
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This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.