Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias

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Tipo de produção

Artigo de evento

Data de publicação

2014-10-29

Texto completo (DOI)

Periódico

2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014

Editor

Citações na Scopus

0

Autores

ASSALTI, R.
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza

Orientadores

Resumo

This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.

Citação

ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct, 2014.

Palavras-chave

Keywords

Breakdown voltage; Gate voltage overdrive; Graded-Channel; Intrinsic voltage gain; Unit gain frequency

Assuntos Scopus

Analog performance; Gain frequencies; Gate voltages; Graded channels; Intrinsic voltage gains; nMOSFET transistors; Optimum length; Target application

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