3D simulation of Triple-Gate MOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2010-05-19
Texto completo (DOI)
Periódico
2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
CONDE, J.
CERDEIRA, A.
Marcelo Antonio Pavanello
KILCHYTSKA, V.
FLANDRE, D.
Orientadores
Resumo
In this paper we present a new approach of analyzing 3D structure for Triple-Gate MOSFETs with three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to the crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation of the proposed structure was made for a FinFET arrays with fixed channel length and different fin widths, obtaining a very good coincidence between experimental and simulated characteristics. © 2010 IEEE.
Citação
CONDE, J.; CERDEIRA, A.; PAVANELLO, M. A; KILCHYTSKA, V.; FLANDRE, D. 3D simulation of Triple-Gate MOSFETs. 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, p. 409-411, May, 2010.
Palavras-chave
Keywords
Assuntos Scopus
3D simulations; 3D Structure; Channel length; Crystalline orientations; Fin widths; Mobility parameters; New approaches; Triple-gate MOSFETs