3D simulation of Triple-Gate MOSFETs
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2010-05-19
Autores
CONDE, J.
CERDEIRA, A.
Marcelo Antonio Pavanello
KILCHYTSKA, V.
FLANDRE, D.
CERDEIRA, A.
Marcelo Antonio Pavanello
KILCHYTSKA, V.
FLANDRE, D.
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2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
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CONDE, J.; CERDEIRA, A.; PAVANELLO, M. A; KILCHYTSKA, V.; FLANDRE, D. 3D simulation of Triple-Gate MOSFETs. 2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings, p. 409-411, May, 2010.
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In this paper we present a new approach of analyzing 3D structure for Triple-Gate MOSFETs with three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to the crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation of the proposed structure was made for a FinFET arrays with fixed channel length and different fin widths, obtaining a very good coincidence between experimental and simulated characteristics. © 2010 IEEE.