SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes
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2022-03-01
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COSTA, F. J.
TREVISOLI, R.
Rodrigo Doria
TREVISOLI, R.
Rodrigo Doria
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2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022
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COSTA, F. J.; TREVISOLI, R.; DORIA, R. SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes. 2022 IEEE 13th Latin American Symposium on Circuits and Systems, LASCAS 2022, March, 2022.
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© 2022 IEEE.The main objective of this work is to carry out an analysis of the effects of cross-coupling in a system composed of SOI UTBB MOSFETs in ultimate integration nodes through numerical simulations, validated with experimental data from literature. In this analysis, it could be observed that two devices located on the channel length direction provoke a reduced cross-coupling on each other. For devices located at distances below 50 nm, a capacitive parasitic coupling between the devices can be observed along with the thermal coupling effect.