Low temperature influence on the uniaxially strained FD SOI nMOSFETs behavior

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dc.contributor.authorde Souza M.
dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.date.accessioned2019-08-19T23:45:12Z
dc.date.available2019-08-19T23:45:12Z
dc.date.issued2007
dc.description.abstractThis work presents the impact of low temperature operation on the characteristics of uniaxially strained fully-depleted SOI nMOSFETs. Devices with channel lengths down to 160 nm were explored in the range 100-380 K. The maximum transconductance in linear region was used to evaluate the mobility enhancement. Besides the increased mobility provided by the strain in comparison to its unstrained SOI counterpart, higher mobility degradation for high values of applied gate voltage was observed. The subthreshold slope and the Drain Induced Barrier Lowering (DIBL) of short-channel devices have been also analyzed, showing that strained devices are more susceptible to the occurrence of short-channel effects. © 2007 Elsevier B.V. All rights reserved.
dc.description.firstpage2121
dc.description.issuenumber9-10
dc.description.lastpage2124
dc.description.volume84
dc.identifier.citationSOUZA, Michelly de; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, Cor. Low temperature influence on the uniaxially strained FD SOI nMOSFETs behavior. Microelectronic Engineering, v. 84, n. 10, p. 2121-2124, 2007.
dc.identifier.doi10.1016/j.mee.2007.04.116
dc.identifier.issn0167-9317
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1125
dc.relation.ispartofMicroelectronic Engineering
dc.rightsAcesso Restrito
dc.subject.otherlanguageFully-depleted SOI MOSFET
dc.subject.otherlanguageLow temperature
dc.subject.otherlanguagesCESL
dc.subject.otherlanguageStrain SOI
dc.titleLow temperature influence on the uniaxially strained FD SOI nMOSFETs behavior
dc.typeArtigo
fei.scopus.citations2
fei.scopus.eid2-s2.0-34248652421
fei.scopus.subjectDrain Induced Barrier Lowering (DIBL)
fei.scopus.subjectFully-depleted SOI MOSFET
fei.scopus.subjectStrain SOI
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34248652421&origin=inward
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