Low frequency noise in submicron Graded-Channel SOI MOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013-09-06
Texto completo (DOI)
Periódico
Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
NEMER, J. P.
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
Orientadores
Resumo
The origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL. © 2013 IEEE.
Citação
NEMER, J. P.; DE SOUZA, M; FLANDRE, D.; PAVANELLO, M. A. Low frequency noise in submicron Graded-Channel SOI MOSFETs. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices. Sept. 2013.
Palavras-chave
Keywords
graded channel; low frequency noise; SOI; Submicron
Assuntos Scopus
Channel length; Fully depleted; Graded channels; Low-Frequency Noise; SOI; SOI-MOSFETs; Submicron