DIBL performance of 60 MeV proton-irradiated SOI MuGFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2010-11-04
Texto completo (DOI)
Periódico
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
5
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
KOBAYASHI, D.
POIZAT, M.
SIMON, E.
CLAEYS, C.
Orientadores
Resumo
The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance. ©2010 IEEE.
Citação
AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; POIZAT, M.; SIMON, E.; CLAEYS, C. DIBL performance of 60 MeV proton-irradiated SOI MuGFETs. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 105-107, Nov. 2010.
Palavras-chave
Keywords
Assuntos Scopus
Back channels; Buried oxides; Drain-induced barrier lowering; FinFETs; Radiation-induced; Transistor performance; Trigate; Uni-axial strains