DIBL performance of 60 MeV proton-irradiated SOI MuGFETs
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2010-11-04
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
KOBAYASHI, D.
POIZAT, M.
SIMON, E.
CLAEYS, C.
MARTINO, J. A.
KOBAYASHI, D.
POIZAT, M.
SIMON, E.
CLAEYS, C.
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ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
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AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; POIZAT, M.; SIMON, E.; CLAEYS, C. DIBL performance of 60 MeV proton-irradiated SOI MuGFETs. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 105-107, Nov. 2010.
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The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance. ©2010 IEEE.