Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors
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Artigo
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2021-11-05
Autores
COSTA, F. J.
TREVISOLI, R.
Rodrigo Doria
TREVISOLI, R.
Rodrigo Doria
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Solid-State Electronics
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COSTA, F. J.; TREVISOLI, R.; DORIA, R. Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors.Solid-State Electronics, v. 185, 2021.
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© 2021 Elsevier LtdThe focus of this work is to perform a first-time analysis of the thermal cross-coupling of a device on a neighbor one in advanced UTBB transistors through 3D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the temperature rise due to a self-heated device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 µm to 50 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase in the thermal resistance of a neighbor device.