Cross-coupling effects in common-source current mirrors composed by UTBB transistors
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Data
2022
Autores
JOSÉ DA COSTA, F.
TREVISOLI, R.
Rodrigo Doria
TREVISOLI, R.
Rodrigo Doria
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Solid-State Electronics
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JOSÉ DA COSTA, F.; TREVISOLI, R.; DORIA R. Cross-coupling effects in common-source current mirrors composed by UTBB transistors. Solid-State Electronics, v. 194, 2022.
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© 2022 Elsevier LtdThis work performs an analysis of the cross-coupling effects influence on the performance of current mirrors composed by advanced UTBB SOI MOSFETs through 3D numerical simulations validated to experimental data of single devices. It is shown the presence of a capacitive coupling acting in the system, which can be demonstrated through the threshold voltage reduction at small distances between devices. Additionally, the temperature rise in the system due to the thermal coupling provokes a decrease in the input current as the devices become closer to each other. This is responsible for an increase of 3 % on ID2/ID1 ratio when the devices are biased at the same time and when the distance between them is lowered to 100 nm.