Simulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model
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2010-01-05
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CENTRERAS, E.
CERDEIRA, A.
Marcelo Antonio Pavanello
CERDEIRA, A.
Marcelo Antonio Pavanello
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ECS Transactions
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CENTRERAS, E.; CERDEIRA, A.; PAVANELLO, M. A. Simulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model. ECS Transactions, v. 31, n. 1, p. 75-81, 2010.
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In this paper Operational Transconductance Amplifiers (OTA's) were simulated in SPICE, using the Symmetric Doped Double-Gate Model which includes the capacitances of Double-Gate (DG) transistors. In this work, all the transistors have been simulated using just one model for lightly doped transistor (TLD) and high doped transistor (THd) N-channel devices and P-channel devices. These OTA's show an improvement in the high open-loop voltage gain which is related mainly to the reduction of the drain output conductance which give higher Early voltages for DG GC transistors. ©The Electrochemical Society.