The roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors
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Data
2011-01-05
Autores
Rodrigo Doria
Marcelo Antonio Pavanello
TREVISOLI, R. D.
Michelly De Souza
LEE, C. W.
FERAIN, I.
DEHDASHTI AKHAVAN, N.
YAN, R.
RAZAVI, P.
YU, R.
KRANTI, A.
COLINGE, J. P.
Marcelo Antonio Pavanello
TREVISOLI, R. D.
Michelly De Souza
LEE, C. W.
FERAIN, I.
DEHDASHTI AKHAVAN, N.
YAN, R.
RAZAVI, P.
YU, R.
KRANTI, A.
COLINGE, J. P.
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ECS Transactions
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DORIA, R.; PAVANELLO, M. A.; TREVISOLI, R. D.; DE SOUZA, M.; LEE, C. W.; FERAIN, I.; DEHDASHTI AKHAVAN, N.; YAN, R.; RAZAVI, P.; YU, R.; KRANTI, A.; COLINGE, J. P. The roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors. ECS Transactions, v. 35, n. 5, p. 283-288. Jan. 2011.
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This paper evaluates the roles of the electric field (E) and the density of carries (n) in the drain conductance of Junctionless Nanowire Transistors (JNTs). The behavior of E and n presented by JNTs with the variation of the gate and the drain voltages has been compared to the one presented by Inversion Mode (M) Trigate devices of similar dimensions. It has been shown that the lower drain output conductance exhibited by Junctionless transistors with respect to the IM ones is correlated not only to the differences in the mobility and its degradation but also to the electric field, the density of carries and the first order derivative of these variables with respect the drain voltage. ©The Electrochemical Society.