Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013-09-06
Texto completo (DOI)
Periódico
Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
TEIXEIRA, F. F.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
In this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are investigated. The impact of X-ray irradiation was analyzed taking into consideration two different splits: unstrained and uniaxial strained devices. Comparing the p and n-channel transistors response to radiation, the influence of X-rays is more noticeable in n-channel devices due to the positive charges at the buried oxide, increasing the back gate leakage current. The opposite effect is observed in p-channel devices for which the radiation improves some devices characteristics since it makes the device more immune to the back interface conduction. © 2013 IEEE.
Citação
TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
Palavras-chave
Keywords
Back conduction; Multiple-Gate MOSFETs (MuGFETs); X-ray radiation
Assuntos Scopus
Current characteristic; MOSFETs; N-channel devices; N-channel transistors; P channel device; Parasitic conduction; X ray irradiation; X ray radiation