Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction
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2013-09-06
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TEIXEIRA, F. F.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
BORDALLO, C. C. M.
Marcilei Aparecida Guazzelli
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
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Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
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TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
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In this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are investigated. The impact of X-ray irradiation was analyzed taking into consideration two different splits: unstrained and uniaxial strained devices. Comparing the p and n-channel transistors response to radiation, the influence of X-rays is more noticeable in n-channel devices due to the positive charges at the buried oxide, increasing the back gate leakage current. The opposite effect is observed in p-channel devices for which the radiation improves some devices characteristics since it makes the device more immune to the back interface conduction. © 2013 IEEE.