Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction

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dc.contributor.authorTEIXEIRA, F. F.
dc.contributor.authorBORDALLO, C. C. M.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:01:49Z
dc.date.available2022-01-12T22:01:49Z
dc.date.issued2013-09-06
dc.description.abstractIn this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are investigated. The impact of X-ray irradiation was analyzed taking into consideration two different splits: unstrained and uniaxial strained devices. Comparing the p and n-channel transistors response to radiation, the influence of X-rays is more noticeable in n-channel devices due to the positive charges at the buried oxide, increasing the back gate leakage current. The opposite effect is observed in p-channel devices for which the radiation improves some devices characteristics since it makes the device more immune to the back interface conduction. © 2013 IEEE.
dc.identifier.citationTEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
dc.identifier.doi10.1109/SBMicro.2013.6676144
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4094
dc.relation.ispartofChip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageBack conduction
dc.subject.otherlanguageMultiple-Gate MOSFETs (MuGFETs)
dc.subject.otherlanguageX-ray radiation
dc.titleRadiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84893502682
fei.scopus.subjectCurrent characteristic
fei.scopus.subjectMOSFETs
fei.scopus.subjectN-channel devices
fei.scopus.subjectN-channel transistors
fei.scopus.subjectP channel device
fei.scopus.subjectParasitic conduction
fei.scopus.subjectX ray irradiation
fei.scopus.subjectX ray radiation
fei.scopus.updated2025-01-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84893502682&origin=inward
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