Drain leakage current behavior in circular gate SOI nMOSFET operating from room temperature up to 573K
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Data
2007-10-07
Autores
Bellodi, Marcello
Almeida, Luciano Mendes
Almeida, Luciano Mendes
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Periódico
ECS Transactions
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BELLODI, M.; ALMEIDA, L. M. Drain leakage current behavior in circular gate SOI nMOSFET operating from room temperature up to 573K. ECS Transactions, v. 11, n. 3, p. 71-84, Oct, 2007.
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In this paper is presented the drain leakage current behavior and its components that appears in circular gate SOI nMOSFETs operating from room temperature up to 573K, where the channel length and the geometrical drain bias terminal influence in the leakage current behavior was studied when the devices are operating at high temperatures using 3-D numerical simulations. The results show that the drain leakage current depends strongly on the channel length and its density distribution is non-uniform along the silicon film thickness. Besides it, also was observed that the drain leakage current depends on the drain terminal configuration, as it will be described in this paper for all devices operating at high temperatures. © The Electrochemical Society.