Analysis of matching in graded-channel SOI MOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2007-09-06
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
Orientadores
Resumo
This paper presents an analysis of mismatch in Graded-Channel (GC) SOI MOSFETs. Experimental results show that GC devices present poorer threshold voltage and drain current matching in comparison to conventional SOI counterpart. The analytical model for the drain current of GC devices is used to investigate the reasons for this matching worsening. Two-dimensional numerical simulations are used to predict the matching behavior both in linear and saturation regions. © The Electrochemical Society.
Citação
DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. Analysis of matching in graded-channel SOI MOSFETs. ECS Transactions, v. 9, n. 1, p. 323-332, Sept. 2007.
Palavras-chave
Keywords
Assuntos Scopus
Analytical modelling; Current matching; Electrochemical Society (ECS); Experimental results; Matching behavior; Microelectronics technology; SOI-MOSFETs; Two-dimensional (2-D) numerical simulation