Analysis of matching in graded-channel SOI MOSFETs

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2007-09-06
Autores
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
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ECS Transactions
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DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. Analysis of matching in graded-channel SOI MOSFETs. ECS Transactions, v. 9, n. 1, p. 323-332, Sept. 2007.
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This paper presents an analysis of mismatch in Graded-Channel (GC) SOI MOSFETs. Experimental results show that GC devices present poorer threshold voltage and drain current matching in comparison to conventional SOI counterpart. The analytical model for the drain current of GC devices is used to investigate the reasons for this matching worsening. Two-dimensional numerical simulations are used to predict the matching behavior both in linear and saturation regions. © The Electrochemical Society.

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