Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
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2011-09-23
Autores
AGOPIAN, P. G. D.
MARTINO, J. A.
KOBAYASHI, D.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
KOBAYASHI, D.
SIMOEN, E.
CLAEYS, C.
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Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
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AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; SIMOEN, E.; CLAEYS, C. Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, p. 7-10, Sept. 2011.
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In this work the proton irradiation influence on basic and analog parameters of triple-gate SOI MOSFETs is investigated. The studied devices are strained and unstrained p- and nMuGFETs. The type of stress considered in each case, was the stress that results in a better performance of p- (CESL) and n-devices (sSOI+CESL). Although the results showed the worse behavior for post-irradiated nMOS transistors, a higher immunity to the back interface influence was obtained for post-irradiated pMOS devices and consequently a better analog performance was observed. The unit gain frequency improved for p and nMOS post-irradiated devices. © 2011 IEEE.