Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET
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Tipo de produção
Artigo de evento
Data de publicação
2010-01-05
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
DA SILVA, E. L. R.
MIGUEZ, M.
Michelly De Souza
ARNAUD, A.
Marcelo Antonio Pavanello
Orientadores
Resumo
In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors. ©The Electrochemical Society.
Citação
DA SILVA, E. L. R.; MIGUEZ, M.; DE SOUZA, M.; ARNAUD, A.; PAVANELLO, M. A. Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET. ECS Transactions, v. 31, n. 1, p. 359-366, 2010.
Palavras-chave
Keywords
Assuntos Scopus
Fully depleted; Low-Frequency Noise; NMOSFET; SOI n-MOSFETs; SOI transistors; SOI-MOSFETs