Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET

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dc.contributor.authorDA SILVA, E. L. R.
dc.contributor.authorMIGUEZ, M.
dc.contributor.authorMichelly De Souza
dc.contributor.authorARNAUD, A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:03:52Z
dc.date.available2022-01-12T22:03:52Z
dc.date.issued2010-01-05
dc.description.abstractIn this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors. ©The Electrochemical Society.
dc.description.firstpage359
dc.description.issuenumber1
dc.description.lastpage366
dc.description.volume31
dc.identifier.citationDA SILVA, E. L. R.; MIGUEZ, M.; DE SOUZA, M.; ARNAUD, A.; PAVANELLO, M. A. Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET. ECS Transactions, v. 31, n. 1, p. 359-366, 2010.
dc.identifier.doi10.1149/1.3474180
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4233
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleAnalysis of the low-frequency noise in graded-channel and standard SOI nMOSFET
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-79952475098
fei.scopus.subjectFully depleted
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectNMOSFET
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectSOI transistors
fei.scopus.subjectSOI-MOSFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79952475098&origin=inward
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