Trap density characterization through low-frequency noise in junctionless transistors

Página do item simplificado
dc.contributor.authorDoria R.T.
dc.contributor.authorTrevisoli R.D.
dc.contributor.authorDe Souza M.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:10Z
dc.date.available2019-08-19T23:45:10Z
dc.date.issued2013
dc.description.abstractThis work evaluates, for the first time, the trap density of Junctionless Nanowire Transistors (JNTs) of two technologies produced with different gate dielectrics through the low-frequency noise (LFN) characterization. Along the work, the LFN resultant from both devices was compared in linear and saturation regimes for different gate biases, showing that these devices can exhibit either 1/f or Lorentzian as the dominant noise source depending on the technology and gate bias. Such analysis showed that devices with SiO2 gate dielectric have presented only one corner frequency over the whole frequency range whereas two corner frequencies with different time constants could be observed in devices with HfSiON gate dielectric. The trap density of both devices showed to be similar to the values reported for inversion mode devices in different recent papers, in the order of 1016 cm-3 eV-1 and 1019 cm-3 eV-1, for SiO2 and HfSiON gate dielectrics, respectively.© 2013 Elsevier B.V.All rights reserved.
dc.description.firstpage79
dc.description.lastpage82
dc.description.volume109
dc.identifier.citationDORIA, R. T.; TREVISOLI, Renan Doria; DE SOUZA, Michelly; Pavanello, Marcelo Antonio. Trap density characterization through low-frequency noise in junctionless transistors. Microelectronic Engineering, v. 109, p. 79-82, 2013.
dc.identifier.doi10.1016/j.mee.2013.03.090
dc.identifier.issn0167-9317
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1099
dc.relation.ispartofMicroelectronic Engineering
dc.rightsAcesso Restrito
dc.subject.otherlanguageEffective trap density
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageNanowire
dc.subject.otherlanguageNoise spectral density
dc.subject.otherlanguageTransistors
dc.titleTrap density characterization through low-frequency noise in junctionless transistors
dc.typeArtigo
fei.scopus.citations10
fei.scopus.eid2-s2.0-84876819688
fei.scopus.subjectHfSiON gate dielectrics
fei.scopus.subjectJunctionless
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectNanowire transistors
fei.scopus.subjectNoise spectral density
fei.scopus.subjectSaturation regime
fei.scopus.subjectTrap density
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84876819688&origin=inward
Arquivos
Coleções
Artigos