Temperature influence on strained nMuGFETs after proton radiation
Nenhuma Miniatura disponível
Citações na Scopus
2
Tipo de produção
Artigo de evento
Data
2013-05-13
Autores
BORDALLO, C.
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
AGOPIAN, P. G. D.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
ECS Transactions
Título da Revista
ISSN da Revista
Título de Volume
Citação
BORDALLO, C.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Temperature influence on strained nMuGFETs after proton radiation. ECS Transactions, v. 53, n. 5, p. 171-176, Maio, 2013.
Texto completo (DOI)
Palavras-chave
Resumo
In this work the influence of temperature on strained n-channel multiple gate devices after proton irradiation is analyzed for two different splits: unstressed and highly stressed devices. This study is based on the analysis of the subthreshold slope, drain induced barrier lowering, transconductance, output conductance and intrinsic voltage gain. It is observed that the influence of a temperature increase on the devices performance is higher than the influence of stress and proton radiation. © The Electrochemical Society.