Temperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths
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15
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2011-09-05
Autores
Michelly De Souza
BULTEEL, O.
FLANDRE, D.
Marcelo Antonio Pavanello
BULTEEL, O.
FLANDRE, D.
Marcelo Antonio Pavanello
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Journal of Integrated Circuits and Systems
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DE SOUZA, M.; BULTEEL, O.; FLANDRE, D. PAVANELLO, M. A. Temperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths. Journal of Integrated Circuits and Systems, v. 6, n. 2, p. 107-113, sept. 2011.
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This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.