Substrate bias influence on the operation of junctionless nanowire transistors
N/D
Tipo de produção
Artigo
Data de publicação
2014
Texto completo (DOI)
Periódico
IEEE Transactions on Electron Devices
Editor
Texto completo na Scopus
Citações na Scopus
36
Autores
Trevisoli R.
Doria R.T.
De Souza M.
Pavanello M.A.
Orientadores
Resumo
The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, the maximum transconductance, the subthreshold slope, the drain-induced barrier lowering (DIBL), and the ION/IOFF ratio are the key parameters under analysis. It has been shown that the negative back bias can reduce the short-channel effects occurrence, improving the ION/ OFF ratio and DIBL. © 1963-2012 IEEE.
Citação
TREVISOLI, Renan Doria; DORIA, Rodrigo Trevisoli; DE SOUZA, Michelly; PAVANELLO, Marcelo A.. Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors. IEEE Transactions on Electron Devices, v. 61, n. 5, p. 1575-1582, 2014.
Palavras-chave
Keywords
Junctionless transistors; maximum transconductance; substrate bias; subthreshold slope; threshold voltage
Assuntos Scopus
Back bias; Drain-induced barrier lowering; Junctionless transistors; Maximum transconductance; Nanowire transistors; Short-channel effect; Substrate bias; Subthreshold slope