Open model for external mechanical stress of semiconductors and MEMS

dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.date.accessioned2022-01-12T21:57:21Z
dc.date.available2022-01-12T21:57:21Z
dc.date.issued2018-03-22
dc.description.abstract© 2018 IEEE.This paper defines the details of the bending equipment solution and the calibration required for characterization of external mechanical stress in semiconductors and MEMS. The equipment is suited for use in probe station for electrical characterization of devices under controlled external mechanical stress.
dc.description.firstpage189
dc.description.lastpage193
dc.description.volume2018-March
dc.identifier.citationBÜHLER, R. T.; GIACOMINI, R. Open model for external mechanical stress of semiconductors and MEMS.IEEE International Conference on Microelectronic Test Structures, p. 189-193, March, 2018.
dc.identifier.doi10.1109/ICMTS.2018.8383795
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3787
dc.relation.ispartofIEEE International Conference on Microelectronic Test Structures
dc.rightsAcesso Restrito
dc.subject.otherlanguageexternal mechanical stress
dc.subject.otherlanguageMEMS
dc.subject.otherlanguagesemiconductor
dc.titleOpen model for external mechanical stress of semiconductors and MEMS
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85049234259
fei.scopus.subjectElectrical characterization
fei.scopus.subjectMechanical stress
fei.scopus.subjectProbe stations
fei.scopus.updated2023-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85049234259&origin=inward
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