Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
dc.contributor.author | BOAS A. C. V. | |
dc.contributor.author | DE MELO, M. A. A. | |
dc.contributor.author | Roberto Santos | |
dc.contributor.author | Renato Giacomini | |
dc.contributor.author | MEDINA, N. H. | |
dc.contributor.author | SEIXAS, L. E. | |
dc.contributor.author | FINCO, S. | |
dc.contributor.author | PALOMO, F. R. | |
dc.contributor.author | ROMERO-MAESTRO A. | |
dc.contributor.author | Marcilei Aparecida Guazzelli | |
dc.contributor.authorOrcid | https://orcid.org/0000-0003-1060-2649 | |
dc.contributor.authorOrcid | https://orcid.org/0000-0001-7110-7241 | |
dc.date.accessioned | 2022-05-01T06:04:00Z | |
dc.date.available | 2022-05-01T06:04:00Z | |
dc.date.issued | 2019-09-20 | |
dc.description.abstract | The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments. | |
dc.identifier.citation | BOAS A. C. V.; DE MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRO A.; GUAZZELLI, M. A. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments. 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019, Sept. 2019. | |
dc.identifier.doi | 10.1109/RADECS47380.2019.9745697 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/4486 | |
dc.relation.ispartof | 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019 | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | GaN | |
dc.subject.otherlanguage | HEMT | |
dc.subject.otherlanguage | Radiation Effects | |
dc.subject.otherlanguage | Total Ionizing Dose | |
dc.title | Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments | |
dc.type | Artigo de evento | |
fei.scopus.citations | 8 | |
fei.scopus.eid | 2-s2.0-85128566409 | |
fei.scopus.subject | Bias conditions | |
fei.scopus.subject | Exposed to | |
fei.scopus.subject | GaN HEMTs | |
fei.scopus.subject | GaN technology | |
fei.scopus.subject | Harsh environment | |
fei.scopus.subject | Off state | |
fei.scopus.subject | On state | |
fei.scopus.subject | Radiation hardness | |
fei.scopus.subject | Switching tests | |
fei.scopus.subject | Total Ionizing Dose | |
fei.scopus.updated | 2025-01-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85128566409&origin=inward |