Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments

dc.contributor.authorBOAS A. C. V.
dc.contributor.authorDE MELO, M. A. A.
dc.contributor.authorRoberto Santos
dc.contributor.authorRenato Giacomini
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorSEIXAS, L. E.
dc.contributor.authorFINCO, S.
dc.contributor.authorPALOMO, F. R.
dc.contributor.authorROMERO-MAESTRO A.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-05-01T06:04:00Z
dc.date.available2022-05-01T06:04:00Z
dc.date.issued2019-09-20
dc.description.abstractThe COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.
dc.identifier.citationBOAS A. C. V.; DE MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRO A.; GUAZZELLI, M. A. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments. 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019, Sept. 2019.
dc.identifier.doi10.1109/RADECS47380.2019.9745697
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4486
dc.relation.ispartof2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
dc.rightsAcesso Restrito
dc.subject.otherlanguageGaN
dc.subject.otherlanguageHEMT
dc.subject.otherlanguageRadiation Effects
dc.subject.otherlanguageTotal Ionizing Dose
dc.titleRadiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
dc.typeArtigo de evento
fei.scopus.citations5
fei.scopus.eid2-s2.0-85128566409
fei.scopus.subjectBias conditions
fei.scopus.subjectExposed to
fei.scopus.subjectGaN HEMTs
fei.scopus.subjectGaN technology
fei.scopus.subjectHarsh environment
fei.scopus.subjectOff state
fei.scopus.subjectOn state
fei.scopus.subjectRadiation hardness
fei.scopus.subjectSwitching tests
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85128566409&origin=inward
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